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PDF IRFHM8334TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM8334TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
9.0
13.5
7.1
25h
V
V
m:
nC
A
Applications
• Control MOSFET for high frequency buck converters
Features
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
IRFHM8334TRPbF
HEXFET® Power MOSFET
PQFN 3.3 X 3.3 mm
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
⇒ Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFHM8334PBF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPBF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Pulsed Drain Current
fPower Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
13
43gh
27gh
25h
176
2.7
28
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014
1 page  
IRFHM8334TRPbF
30
ID = 20A
25
20
15
TJ = 125°C
10
TJ = 25°C
5
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
160
ID
140 TOP 4.3A
9.0A
120 BOTTOM 20A
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHM8334TRPBF.PDF ] | |
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