DataSheet.es    


PDF ESD112-B1-02 Data sheet ( Hoja de datos )

Número de pieza ESD112-B1-02
Descripción Transient Voltage Suppressor Diodes
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de ESD112-B1-02 (archivo pdf) en la parte inferior de esta página.


Total 15 Páginas

No Preview Available ! ESD112-B1-02 Hoja de datos, Descripción, Manual

TVS Diodes
Transient Voltage Suppressor Diodes
ESD112-B1-02 Series
Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode
ESD112-B1-02ELS
ESD112-B1-02EL
Data Sheet
Rev. 1.3, 2013-11-27
Final
Power Management & Multimarket

1 page




ESD112-B1-02 pdf
ESD112-B1-02 Series
Characteristics
Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Reverse working voltage VRWM
Breakdown voltage
VBR
–5.3
7
5.3 V
– V IR = 1 mA,
from pin 1 to pin 2,
from pin 2 to pin 1
Reverse current
IR
<1 50 nA VR = 5.3 V
Table 2-3 RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Diode capacitance
Series inductance
CL
LS
0.23
0.4
0.2 0.4
0.2 –
0.4 –
pF VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
nH ESD112-B1-02ELS
ESD112-B1-02EL
Table 2-4 ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit Note /
Min.
Typ.
Max.
Test Condition
Clamping voltage2)
VCL
29 –
V ITLP = 16 A
– 44 –
ITLP = 30 A
Clamping voltage1)
– 11 17
IPP = 1 A
– 15 21
IPP = 3 A
Dynamic resistance2)
RDYN
1
1) IPP according to IEC61000-4-5 (tp = 8/20 µs)
2) Please refer to Application Note AN210 [4]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between ITLP1 = 10 A and
ITLP2 = 40 A.
Final Data Sheet
5 Rev. 1.3, 2013-11-27

5 Page





ESD112-B1-02 arduino
3 Application Information
ESD112-B1-02 Series
Application Information
Protected signal line
1
ESD
I/O sensitive
device
The protection diode should be placed very close to the location
where the ESD or other transients can occur to keep loops and
inductances as small as possible .
Pin 2 (or pin 1) should be connected directly to a ground plane on
the board .
2
A pplic ation_E S D0P 2RF -02x x .v s d
Figure 3-1 Single line, bi-directional ESD / Transient protection [1], [2]
Final Data Sheet
11 Rev. 1.3, 2013-11-27

11 Page







PáginasTotal 15 Páginas
PDF Descargar[ Datasheet ESD112-B1-02.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ESD112-B1-02Transient Voltage Suppressor DiodesInfineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar