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PDF SR810 Data sheet ( Hoja de datos )

Número de pieza SR810
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! SR810 Hoja de datos, Descripción, Manual

CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SR802 thru SR820
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SR SR SR SR SR SR SR
SYMBOL
802 803 804 805 806 809 810
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
20 30 40 50 60 90 100
14 21 28 35 42 63 70
20 30 40 50 60 90 100
8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
SR
815
150
105
150
SR
820
200
140
200
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@8A
VF 0.55 0.70 0.92 1.02 V
Maximum reverse current @ rated VR
TJ=25
TJ=100
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJA
TJ
TSTG
0.5
15
-
- 55 to +125
0.1
10 -
-5
10000
40
- 55 to +150
- 55 to +150
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309011
Version: I13

1 page





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