|
|
|
부품번호 | VS-30TPS12PbF 기능 |
|
|
기능 | Thyristor | ||
제조업체 | Vishay | ||
로고 | |||
전체 9 페이지수
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
2
(A)
3
2
1
TO-247AC
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
1 (K) (G) 3
TO-247AC
Single SCR
20 A
800 V, 1200 V
1.3 V
45 mA
-40 °C to 125 °C
FEATURES
• Designed and qualified according to
JEDEC®-JESD47
• 125 °C max. operating junction temperature
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-30TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
20 A, TJ = 25 °C
dI/dt
TJ
VALUES
20
30
800/1200
300
1.3
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-30TPS08PbF, VS-30TPS08-M3
VS-30TPS12PbF, VS-30TPS12-M3
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
800
1200
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
IRRM/IDRM
AT 125 °C
mA
10
Revision: 06-Feb-14
1 Document Number: 94386
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
60
180°
120°
50 90°
60°
30°
40
RMSLimit
30
20 Conduction Angle
10 30TPS.. Series
TJ= 125°C
0
0 5 10 15 20 25 30
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
80
DC
180°
120°
60 90°
60°
30°
40 RMSLimit
Conduction Period
20
30TPS.. Series
TJ= 125°C
0
0 10 20 30 40 50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
1000
TJ= 25°C
100
280
At Any Rated Load Condition And With
260
Rated V RRMApplied Following Surge.
Initial TJ = 125°C
240 @60 Hz 0.0083 s
@50 Hz 0.0100 s
220
200
180
160
140 30TPS.. Series
120
1
10 100
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
Maximum Non Repetitive Surge Current
280 Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Ma intained.
260 Initial TJ= 125°C
No Voltage Reapplied
240 Rated VRRMReapplied
220
200
180
160
140 30TPS.. Series
120
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ= 125°C
10
30TPS.. Series
1
01234567
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 06-Feb-14
4 Document Number: 94386
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Outline Dimensions
Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
2xR
(2)
(3)
E
N
S
D
12
3
(5) L1
CL
2 x b2
3xb
0.10 M C A M
2x e
b4
See view B
A
A2
A
D
A
C
A1
A
(6) Φ P
Ø KM DBM
D2
(Datum B)
Φ P1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Plating
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
A1 2.21 2.59 0.087 0.102
D2 0.51 1.30 0.020 0.051
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
e
5.46 BSC
0.215 BSC
b1 0.99 1.35 0.039 0.053
Ø K 2.54
0.010
b2 1.65 2.39 0.065 0.094
b3 1.65 2.34 0.065 0.092
L 14.20 16.10 0.559 0.634
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
N 7.62 BSC
0.3
b5 2.59 3.38 0.102 0.133
Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035
Ø P1
- 6.98 - 0.275
c1 0.38 0.84 0.015 0.033
D
19.71 20.70 0.776 0.815
3
Q 5.31 5.69 0.209 0.224
R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c
Revision: 07-Apr-15
1 Document Number: 95223
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ VS-30TPS12PbF.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VS-30TPS12PbF | Thyristor | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |