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부품번호 | VS-40TPS08A-M3 기능 |
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기능 | High Voltage Phase Control Thyristor | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage Phase Control Thyristor, 40 A
2
(A)
TO-247AC
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
1 (K) (G) 3
TO-247AC
Single SCR
35 A
800 V, 1200 V
1.45 V
150 mA
- 40 °C to 125 °C
FEATURES
• Designed and qualified according to
JEDEC-JESD47
• Low IGT parts available
• Compliant to RoHS Directive 2002/95/EC
• 125 °C max. operating junction temperature
• Halogen-free according to IEC 61249-2-21
definition (-M3 only)
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Sinusoidal waveform
IRMS
VRRM/VDRM
ITSM
VT 40 A, TJ = 25 °C
dV/dt
dI/dt
TJ
VALUES
35
55
800/1200
500
1.45
1000
100
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-40TPS08APbF, VS-40TPS08A-M3
VS-40TPS08PbF, VS-40TPS08-M3
VS-40TPS12APbF, VS-40TPS12A-M3
VS-40TPS12PbF, VS-40TPS12-M3
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
800 900
1200
1300
800 900
1200
1300
IRRM/IDRM
AT 125 °C
mA
10
Revision: 10-Nov-11
1 Document Number: 94388
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
550
At Any Ra ted Load Condition And With
Rated V RRM App lied Following Surge.
500 Initia l TJ= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
450
400
350
300
40TPS.. Series
250
1
10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
100
600
Maximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
550 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
500 No Voltage Reapp lied
Rated VRRM Reapp lied
450
400
350
300 40TPS.. Series
250
0.01
0.1
1
Pulse Tra in Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10 TJ= 25°C
TJ= 125°C
40TPS.. Series
1
0.5 1 1.5 2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(1) PGM = 100 W, tp = 500µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
1
VGD
0.1
0.001
IGD
0.01
(4) (3) (2) (1)
40TPS..A Series
Frequency Limited by PG(AV)
0.1 1 10 100 1000
InstantaneousGateCurrent(A)
Fig. 8 - Gate Characteristics
Revision: 10-Nov-11
4 Document Number: 94388
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
(3)
E
N
S
A
A2
A
A
(6) Ø P
Ø KM DBM
D2
(Datum B)
FP1
2xR
(2)
D
12
3
(5) L1
CL
2 x b2
3xb
0.10 M C A M
2x e
b4
See view B
D
A
C
A1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Planting
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
b1 0.99 1.35 0.039 0.053
e
5.46 BSC
0.215 BSC
FK 2.54
0.010
b2 1.65 2.39 0.065 0.094
L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
b5 2.59 3.38 0.102 0.133
c 0.38 0.86 0.015 0.034
N 7.62 BSC
0.3
P 3.56 3.66 0.14 0.144
P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030
Q 5.31 5.69 0.209 0.224
D
19.71 20.70 0.776 0.815
3
R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
1 Document Number: 95223
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-40TPS08A-M3 | High Voltage Phase Control Thyristor | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |