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PDF W971GG8KB Data sheet ( Hoja de datos )
| Número de pieza | W971GG8KB | |
| Descripción | 16M x 8-BANKS x 8-BIT DDR2 SDRAM | |
| Fabricantes | Winbond | |
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W971GG8KB
16M 8 BANKS 8 BIT DDR2 SDRAM
Table of Contents-
1. GENERAL DESCRIPTION ...................................................................................................................4
2. FEATURES ...........................................................................................................................................4
3. ORDER INFORMATION .......................................................................................................................4
4. KEY PARAMETERS .............................................................................................................................5
5. BALL CONFIGURATION ......................................................................................................................6
6. BALL DESCRIPTION............................................................................................................................7
7. BLOCK DIAGRAM ................................................................................................................................8
8. FUNCTIONAL DESCRIPTION..............................................................................................................9
8.1 Power-up and Initialization Sequence ...................................................................................................9
8.2 Mode Register and Extended Mode Registers Operation ...................................................................10
8.2.1
Mode Register Set Command (MRS)...............................................................................10
8.2.2
Extend Mode Register Set Commands (EMRS) ..............................................................11
8.2.2.1
Extend Mode Register Set Command (1), EMR (1)................................................11
8.2.2.2
DLL Enable/Disable................................................................................................12
8.2.2.3
Extend Mode Register Set Command (2), EMR (2)................................................13
8.2.2.4
Extend Mode Register Set Command (3), EMR (3)................................................14
8.2.3
Off-Chip Driver (OCD) Impedance Adjustment ................................................................15
8.2.3.1
Extended Mode Register for OCD Impedance Adjustment ....................................16
8.2.3.2
OCD Impedance Adjust ..........................................................................................16
8.2.3.3
Drive Mode .............................................................................................................17
8.2.4
On-Die Termination (ODT)...............................................................................................18
8.2.5
ODT related timings .........................................................................................................18
8.2.5.1
MRS command to ODT update delay.....................................................................18
8.3 Command Function.............................................................................................................................20
8.3.1
Bank Activate Command..................................................................................................20
8.3.2
Read Command ...............................................................................................................21
8.3.3
Write Command ...............................................................................................................21
8.3.4
Burst Read with Auto-precharge Command.....................................................................21
8.3.5
Burst Write with Auto-precharge Command.....................................................................21
8.3.6
Precharge All Command ..................................................................................................21
8.3.7
Self Refresh Entry Command ..........................................................................................21
8.3.8
Self Refresh Exit Command .............................................................................................22
8.3.9
Refresh Command ...........................................................................................................22
8.3.10
No-Operation Command ..................................................................................................23
8.3.11
Device Deselect Command..............................................................................................23
8.4 Read and Write access modes ...........................................................................................................23
8.4.1
Posted CAS ....................................................................................................................23
Publication Release Date: Sep. 11, 2013
- 1 - Revision A02
1 page  
W971GG8KB
4. KEY PARAMETERS
SYM.
SPEED GRADE
Bin(CL-tRCD-tRP)
Part Number Extension
@CL = 7
@CL = 6
tCK(avg) Average clock period
@CL = 5
@CL = 4
@CL = 3
tRCD
tRP
tRC
tRAS
IDD0
IDD1
IDD4R
IDD4W
IDD5B
IDD6
IDD7
Active to Read/Write Command Delay Time
Precharge to Active Command Period
Active to Ref/Active Command Period
Active to Precharge Command Period
Operating one bank active-precharge current
Operating one bank active-read-precharge current
Operating burst read current
Operating burst write current
Burst refresh current
Self refresh current (TCASE ≤ 85°C)
Operating bank interleave read current
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
DDR2-1066
7-7-7
-18
1.875 nS
7.5 nS
2.5 nS
7.5 nS
3 nS
7.5 nS
3.75 nS
7.5 nS
13.125 nS
13.125 nS
58.125 nS
45 nS
75 mA
90 mA
145 mA
155 mA
145 mA
8 mA
190 mA
DDR2-800
5-5-5/6-6-6
-25/25I
2.5 nS
8 nS
2.5 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
12.5 nS
12.5 nS
57.5 nS
45 nS
70 mA
85 mA
120 mA
130 mA
130 mA
8 mA
185 mA
DDR2-667
5-5-5
-3
3 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
15 nS
15 nS
60 nS
45 nS
65 mA
80 mA
105 mA
110 mA
120 mA
8 mA
160 mA
Publication Release Date: Sep. 11, 2013
- 5 - Revision A02
5 Page 
W971GG8KB
A[2:0] with options of 4 and 8 bit burst lengths. The burst length decodes are compatible with DDR
SDRAM. Burst address sequence type is defined by A3, CAS Latency is defined by A[6:4]. The DDR2
does not support half clock latency mode. A7 is used for test mode. A8 is used for DLL reset. A7 must
be set to LOW for normal MRS operation. Write recovery time WR is defined by A[11:9]. Refer to the
table for specific codes.
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address Field
0 0 0 0 PD
WR
DLL TM
CAS Latency
BT
Burst Length
Mode Register
A8 DLL Reset
0 No
1 Yes
A7 Mode
0 Normal
1 Test
BA1 BA0
00
01
10
11
A12
0
1
MRS mode
MR
EMR (1)
EMR (2)
EMR (3)
Active power down exit time
Fast exit (use tXARD)
Slow exit (use tXARDS)
Write recovery for Auto-precharge
A11 A10 A9
WR *
0 0 0 Reserved
001
2
010
3
011
4
100
5
101
6
110
7
111
8
A3 Burst Type
0 Sequential
1 Interleave
Burst Length
A2 A1 A0
010
011
BL
4
8
CAS Latency
A6 A5 A4
000
001
010
011
100
101
110
111
Latency
Reserved
Reserved
Reserved
3
4
5
6
7
Note:
1. WR (write recovery for Auto-precharge) min is determined by tCK(avg) max and WR max is determined by tCK(avg) min.
WR[cycles] = RU{ tWR[nS] / tCK(avg)[nS] }, where RU stands for round up. The mode register must be programmed to this
value. This is also used with tRP to determine tDAL.
Figure 2 – Mode Register Set (MRS)
8.2.2 Extend Mode Register Set Commands (EMRS)
8.2.2.1 Extend Mode Register Set Command (1), EMR (1)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "H", BA1 = "L, BA2 = "L" A0 to A13 =
Register data)
The extended mode register (1) stores the data for enabling or disabling the DLL, output driver
strength, additive latency, ODT, DQS disable, OCD program. The default value of the extended
mode register (1) is not defined, therefore the extended mode register (1) must be programmed during
initialization for proper operation. The DDR2 SDRAM should be in all bank precharge with CKE
already high prior to writing into the extended mode register (1). The mode register set command
cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register (1).
Extended mode register (1) contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in the precharge state. A0 is used for
DLL enable or disable. A1 is used for enabling a reduced strength output driver. A[5:3] determines the
additive latency, A[9:7] are used for OCD control, A10 is used for DQS disable. A2 and A6 are used
for ODT setting.
- 11 -
Publication Release Date: Sep. 11, 2013
Revision A02
11 Page | ||
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