2N7002DW 데이터시트 PDF ( Data sheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a lo

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N700

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fa

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: