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Datasheet 2N7002K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 36 | 2N7002K | N-Channel Enhanceent Mode Field Effect Transistor SMD Type
MOSFET
N-Channel Enhanceent Mode Field Effect Transistor 2N7002K
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Ma |
 Kexin |
 |
| 35 | 2N7002K | N-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
VDS VDGR VGS ID IDM (1)
PTOT Rthj- amb
Parameter
Drain-source volt |
 HOTTECH |
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| 34 | 2N7002K | N-Channel MOSFET MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1 • High density cell design for low RDS(ON)
• Voltage |
 MCC |
|
| 33 | 2N7002K | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
*
Description:
* Gate Pretection Diode
SOURCE 2
The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for |
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