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Datasheet 60N3LH5 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 60N3LH5   N-channel Power MOSFET

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchmark ■ Extremely lo
 STMicroelectronics
STMicroelectronics		 datasheet 60N3LH5 pdf

60N3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
60N3LH5

N-channel Power MOSFET

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchm
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
60N321

GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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