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| 상세설명 |
| Silicon Epitaxial Planar Type Diode
Toshiba Semiconductor 015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package l Nominal voltage tolerance about ±2.5%
(2.0V~12V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Power dissipation
P* 150
Junction temperature
Tj 125
Storage temperature range
Tstg -55~125
* Mounted on a glass epoxy circuit board of 20 × 20mm, Pad dimension of 4 × 4mm.
Unit
mW °C °C
Electrical Characteristics
(See Page 2
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