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상세설명 | 제조사 |
GI09N20
Pb Free Plating Product
ISSUED DATE :2005, 06, 27 REVISED DATE :
GI09N20
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 380m 8.6A
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications.
Features
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Package Dimensions TO-251
| GTM |