16N25E 데이터시트 (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E, D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E FET is designed to withstand high energy in