1N415E PDF 데이터시트 검색

1N415E SILICON MIXER DIODE DESCRIPTION: The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: High burnout resistance Low noise figure Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F = 9375 MH- RL = 100 Ω Plo = 1.0 mW IF = 30 MH-