1N5195 PDF 데이터시트 검색

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500, 118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N5194 1N5195 1N5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA, °C From 25°C to 150°C 1.0 mA, °C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1, 120 s TA = 25°