2SA1315 PDF 데이터시트 검색

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature