2SC5121 PDF 데이터시트 검색

Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification +0.5 8.0 0.1 Unit: mm 3.2±0.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 400 400 7 100 70 1.2 150 55 to +150 Unit V V V mA mA W ˚C ˚C 1 2 3 0.5±0.