2SD0662 데이터시트 (PDF)

Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 High collector-emitter voltage (Base open) VCEO High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta =