2SD1833 PDF 데이터시트 검색

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1833 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V wwwVEBO Emi