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상세설명 | 제조사 |
Silicon N-Channel IGBT
ADE 208 288 (Z)
2SH15 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO 3P
Features
High speed switching Low on saturation voltage
1 2
3
1
2
3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 50 100 150 150 55 to +150 Unit V V A A W
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