2SJ531 PDF 데이터시트 검색

2SJ531 Silicon P Channel MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.050 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline TO 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 18 72 18 Unit V V A A A A