2SJ619 PDF 데이터시트 검색

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-F-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.) High forward transfer admittance: Yfs = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source volt