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| 상세설명 |
| Silicon N-Channel Junction FET
Panasonic Semiconductor Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 0.1
+0.2
0.45 0.1
+0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
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