2SK0601 데이터시트 (PDF)

Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape, magazine packing. 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45˚ 1.0 0.2 +0.1 0.4±0.08 4.0 0.20 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source v