2SK2936 PDF 데이터시트 검색

2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS =0.010 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel