2SK2960 PDF 데이터시트 검색

Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e, d q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 s Applications 13.7 0.2 +0.5