2SK3124 PDF 데이터시트 검색

Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage 6.5±0.1 5.3±0.1 4.35±0.1 unit: mm 2.3±0.1 0.5±0.1 s Applications q High-speed switching (switching power supply) q For high-frequency power amplification 7.3±0.1 1.8±0.1 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Sour