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Silicon N Channel MOS FET High Speed Power Switching
2SK3154
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-682A (Z) 2nd. Edition February 1999 Features
Low on-resistance R DS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3154
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche en
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