2SK3160 PDF 데이터시트 검색

2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 (Z) 1st. Edition February 1999 Features Low on-resistance R DS = 130 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Chan