2SK3211L PDF 데이터시트 검색

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Aval