2SK4207 PDF 데이터시트 검색

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4207 Swiching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3 Unit: mm - Low drain source ON-resistance: RDS (ON) = 0.78 Ω (typ.) - High forward transfer admittance:|Yfs| = 11 S (typ.) - Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 2.0 3.3max. 1.0 －0.25 ＋0.3 Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltage Drain current DC (Note