2STC4468 PDF 데이터시트 검색

2STC4468 High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MH- Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommend