3710S PDF 데이터시트 검색

PD - 94201A l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D IRF3710S IRF3710L VDSS = 100V RDS(on) = 23mΩ G S ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d