501N04A PDF 데이터시트 검색

Directed Energy, Inc. An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv, dt Nanosecond Switching Symbol VDSS VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 4.5 27 4.5 3.5 >200 80 3.5 -55…+150 150 -55…+150 V V V V A A A mJ V, ns V, ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transi