80N055 PDF 데이터시트 검색

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect T.rcaonmsistor designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) Low Ciss : Ciss = 2900 pF TYP. Built-in gate protection diode ORDERING INF