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상세설명 | 제조사 |
high-performance 1M byte (8Mbit) CMOS static RAM
Standard Products Data Sheet January, 2003
QCOTSTM UT8Q1024K8 SRAM
FEATURES 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width TTL compatible inputs and output levels, three-state bidirectional data bus Typical radiation performance - Total dose: 50krad(Si) - SEL Immune >80 MeV-cm2, mg - LETTH(0.25) = >10 MeV-cm2, mg - Saturated Cross Section c
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