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상세설명 | 제조사 |
PNP Transistor - 2SA1300
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications Medium Power Amplifier Applications
2SA1300
Unit: mm
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emit
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