AOT3N60 PDF 데이터시트 검색

AOT3N60 2.5A, 600V N-Channel MOSFET formerly engineering part number AOT9602 General Description The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON)