GaAs HBT HYBRID IC
MITSUBISHI SEMICONDUCTOR
BA01207
Specifications are subject to change without notice.
GaAs HBT HYBRID IC
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.
Outline Drawing
unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND
FEATURES
Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input* and output matching
*Use DC block for input port
2 3
1.45
APPLICATION
N
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