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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
BB506M
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
Features
Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mod)
Outline
RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes:
1. Markin
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