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BB506M PDF 데이터시트 검색

 



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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Markin
Renesas Technology
Renesas Technology

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2