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상세설명 | 제조사 |
N-channel dual-gate PoLo MOS-FETs
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs
Product speci cation Supersedes data of 1999 Dec 01 2000 Mar 29
Philips Semiconductors
Product speci cation
N-channel dual-gate PoLo MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. A
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