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Dual N-channel dual gate MOS-FET
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1205 Dual N-channel dual gate MOS-FET
Product speci cation 2003 Sep 30
Philips Semiconductors
Product speci cation
Dual N-channel dual gate MOS-FET
FEATURES Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch reduces the number of external components Superior cross-modulation performance during AGC High forward transfer admittanc
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