BF960NF06 PDF 데이터시트 검색

BYD Microelectronics Co., Ltd. BF960NF06 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features - VDS =60 V - ID =60A - Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) - Fast switc