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BFP540ESD PDF 데이터시트 검색

 



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Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value 1000 V (HBM) Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GH- Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available BFP540ESD 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540ESD Marking Pin Configuration AUs 1=B 2=E
Infineon
Infineon

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2