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상세설명 | 제조사 |
Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor
For ESD protected high gain low noise amplifier High ESD robustness
typical value 1000 V (HBM) Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin = 0.9 dB @ 1.8 GH- Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
BFP540ESD
3
4
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540ESD
Marking
Pin Configuration
AUs 1=B 2=E
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