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BGF1801-10 PDF 데이터시트 검색

 



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GSM1800 EDGE power module

DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product speci cation 2003 Dec 15 Philips Semiconductors Product speci cation GSM1800 EDGE power module FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19% ACPR < 63 dBc at 400 kH- rms EVM < 1.2% peak EVM < 3.6%. Low distortion to CDMA signals Excellent 2-tone performance Low die temperature due to copper flange Integrated temperatu
NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2