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상세설명 | 제조사 |
GSM1800 EDGE power module
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF1801-10 GSM1800 EDGE power module
Product speci cation 2003 Dec 15
Philips Semiconductors
Product speci cation
GSM1800 EDGE power module
FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19% ACPR < 63 dBc at 400 kH- rms EVM < 1.2% peak EVM < 3.6%. Low distortion to CDMA signals Excellent 2-tone performance Low die temperature due to copper flange Integrated temperatu
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