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BH616UV8011 PDF 데이터시트 검색

 



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Ultra Low Power/High Speed CMOS SRAM

Ultra Low Power, High Speed CMOS SRAM 512K X 16 bit Green package materials are compliant to RoHS BH616UV8011 n FEATURES Wide VCC low operation voltage : 1.65V ~ 3.6V Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.)at 55ns 2mA (Max.) at 1MH- Standby current : 2.5uA (Typ.) at 3.0V, 25OC VCC = 1.2V Data retention current : 1.2uA (Typ.) at 25OC High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V Automatic power down when chip is deselected Easy expansion with C
Brilliance Semiconductor
Brilliance Semiconductor

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2