BTB1216J3 PDF 데이터시트 검색

CYStech Electronics Corp. Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1, 7 PNP Epitaxial Planar High Current (High Performance) Transistor BTB1216J3 Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A RoHS compliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Symbol BTB1216J3 Outline TO-252