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상세설명 | 제조사 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ 312
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 312
VDS
1000 V
ID
6A
RDS(on)
1.5 Ω
Package TO-218 AA
Ordering Code C67078-S3129-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 6 Unit A
ID IDpuls
24
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
6 17 mJ
ID = 6 A, VDD = 50 V,
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