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SIPMOS Power Transistor (N channel Enhancement mode)
BUZ 50 C
SIPMOS ® Power Transistor
N channel Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 50 C
VDS
1000 V
ID
2.3 A
RDS(on)
6Ω
Package TO-220 AB
Ordering Code C67078-A1307-A5
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 2.3
TC = 25 °C
Pulsed drain current
IDpuls
9
TC = 25 °C
m
.co
Gate source voltage Power dissipation
VGS Ptot
± 20 78
V W
TC = 25 °C
4U
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