CED93A3 PDF 데이터시트 검색

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED93A3, CEU93A3 PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Cur