CEM0310 PDF 데이터시트 검색

Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 2.6A, RDS(ON) = 180mΩ @VGS = 10V. CEM0310 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ